Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

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	Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface
	Wen C ; Wang YM ; Wan W ; L, FH ; Liang JW ; Zou J
刊名	journal of applied physics
	2009
卷号	106 期号:7 页码:art.no.073522
关键词	RESOLUTION ELECTRON-MICROSCOPY
ISSN号	0021-8979
通讯作者	li, fh, chinese acad sci, beijing natl lab condensed matter phys, inst phys, beijing 100190, peoples r china. 电子邮箱地址: lifh@aphy.iphy.ac.cn ; j.zou@uq.edu.au
中文摘要	misfit defects in a 3c-sic/si (001) interface were investigated using a 200 kv high-resolution electron microscope with a point resolution of 0.194 nm. the [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. based on this analysis, four types of misfit dislocations at the 3c-sic/si (001) interface were determined. in turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (c) 2009 american institute of physics. [doi:10.1063/1.3234380]
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 50672124 chinese high technology program 2006aa03a106 australia research council dp0663304 dp0985084
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7579]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wen C,Wang YM,Wan W,et al. Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface[J]. journal of applied physics,2009,106(7):art.no.073522.
APA	Wen C,Wang YM,Wan W,L, FH,Liang JW,&Zou J.(2009).Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface.journal of applied physics,106(7),art.no.073522.
MLA	Wen C,et al."Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface".journal of applied physics 106.7(2009):art.no.073522.