Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature

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	Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
	Chen L; Qian X
刊名	applied physics letters
	2009
卷号	95 期号:18 页码:art.no.182505
关键词	annealing
ISSN号	0003-6951
通讯作者	zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jhzhao@red.semi.ac.cn
中文摘要	we report the low-temperature magnetotransport behaviors of (ga,mn)as films with the nominal mn concentration x larger than 10%. the ferromagnetic transition temperature t-c can be enhanced to 191 k after postgrowth annealing (ga,mn)as with x=20%. the temperature t-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below t-c, depends on mn concentration, annealing condition, and magnetic field. moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than t-m.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60836002 10674130major state basic research of china 2007cb924903 chinese academy of sciences kjcx2.yw.w09-1
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7531]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen L,Qian X. Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature[J]. applied physics letters,2009,95(18):art.no.182505.
APA	Chen L,&Qian X.(2009).Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature.applied physics letters,95(18),art.no.182505.
MLA	Chen L,et al."Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature".applied physics letters 95.18(2009):art.no.182505.