Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

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	Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition
	Zhang SM; Jiang DS; Zhu JJ; Guo X; Wang YT; Yang H; Yang H; Zhao DG
刊名	journal of alloys and compounds
	2009
卷号	487 期号:1-2 页码:400-403
关键词	Nitride materials
ISSN号	0925-8388
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
中文摘要	the defect evolution and its correlation with electrical properties of gan films grown by metalorganic chemical vapor deposition are investigated. it is found that the dislocation density decreases gradually during the growth process, and the dislocation reduction rate in the island coalescence process is especially rapid. the changes in electron mobility of gan with the increase of growth time are mainly dependent on the dislocations acting as scattering centers. furthermore, the variation of carrier concentration in gan may be related with the point defects and their clusters. the quality of gan could be improved by suitably increasing the film thickness. (c) 2009 elsevier b.v. all rights reserved.
学科主题	半导体化学
收录类别	SCI
资助信息	national natural science foundation of china 60836003 60776047605060016047602160576003national basic research program of china 2007cb936700 national high technology research and development program of china 2007aa03z401
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7495]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang SM,Jiang DS,Zhu JJ,et al. Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition[J]. journal of alloys and compounds,2009,487(1-2):400-403.
APA	Zhang SM.,Jiang DS.,Zhu JJ.,Guo X.,Wang YT.,...&Zhao DG.(2009).Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition.journal of alloys and compounds,487(1-2),400-403.
MLA	Zhang SM,et al."Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition".journal of alloys and compounds 487.1-2(2009):400-403.