Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy

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	Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy
	Wang HL ; Wu DH ; Wu BP ; Ni HQ ; Huang SS ; Xiong YH ; Wang PF ; Han Q ; Niu ZC ; Tangring I ; Wang SM
刊名	chinese physics letters
	2009
卷号	26 期号:1 页码:art. no. 014214
关键词	THRESHOLD CURRENT-DENSITY
ISSN号	0256-307x
通讯作者	wang hl chinese acad sci inst semicond state key lab superlattice & microstruct beijing 10008 peoples r china. e-mail address: hlwang_19841220@163.com
中文摘要	we report a 1.5-mu m ingaas/gaas quantum well laser diode grown by molecular beam epitaxy on ingaas metamorphic buffers. at 150 k, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current density is 667 a/cm(2) under pulsed operation. the pulsed lasers can operate up to 286 k.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60607016 60625405national basic research programme of china national high technology research and development programme of china supported partly by the national natural science foundation of china under grand nos 60607016 and 60625405, the national basic research programme of china and the national high technology research and development programme of china.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7385]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang HL,Wu DH,Wu BP,et al. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy[J]. chinese physics letters,2009,26(1):art. no. 014214.
APA	Wang HL.,Wu DH.,Wu BP.,Ni HQ.,Huang SS.,...&Wang SM.(2009).Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy.chinese physics letters,26(1),art. no. 014214.
MLA	Wang HL,et al."Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy".chinese physics letters 26.1(2009):art. no. 014214.