Electrically Driven InAs Quantum-Dot Single-Photon Sources

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Electrically Driven InAs Quantum-Dot Single-Photon Sources
	Xiong YH ; Niu ZC ; Dou XM ; Sun BQ ; Huang SS ; Ni HQ ; Du Y ; Xia JB
刊名	chinese physics letters
	2009
卷号	26 期号:2 页码:art. no. 026802
关键词	PILLAR MICROCAVITIES EMISSION COMPUTATION
ISSN号	0256-307x
通讯作者	niu zc chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: zcniu@red.semi.ac.cn
中文摘要	electrically driven single photon source based on single inas quantum dot (qds) is demonstrated. the device contains inas qds within a planar cavity formed between a bottom algaas/gaas distributed bragg reflector (dbr) and a surface gaas-air interface. the device is characterized by i-v curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. hanbury brown and twiss (hbt) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80k
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60625405 10734060national basic research programme of china 2006cb921504 supported by the national natural science foundation of china under grant nos 60625405 and 10734060, and the national basic research programme of china under grant no 2006cb921504.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7365]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xiong YH,Niu ZC,Dou XM,et al. Electrically Driven InAs Quantum-Dot Single-Photon Sources[J]. chinese physics letters,2009,26(2):art. no. 026802.
APA	Xiong YH.,Niu ZC.,Dou XM.,Sun BQ.,Huang SS.,...&Xia JB.(2009).Electrically Driven InAs Quantum-Dot Single-Photon Sources.chinese physics letters,26(2),art. no. 026802.
MLA	Xiong YH,et al."Electrically Driven InAs Quantum-Dot Single-Photon Sources".chinese physics letters 26.2(2009):art. no. 026802.