Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells | |
Hao YF ; Chen YH ; Liu Y ; Wang ZG | |
刊名 | epl
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2009 | |
卷号 | 85期号:3页码:art. no. 37003 |
关键词 | INVERSION ASYMMETRY HETEROSTRUCTURES RASHBA LAYERS |
ISSN号 | 0295-5075 |
通讯作者 | hao yf chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@semi.ac.cn |
中文摘要 | by means of the transfer matrix technique, interface-induced rashba spin splitting of conduction subbands in al0.3ga0.7as/gaas/alxga1-xas/al0.3ga0.7as step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of alxga1-xas step potential is investigated theoretically in the absence of electric field and magnetic field. the dependence of spin splitting on the well width, step width and al concentration is investigated in detail. we find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. the sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. copyright (c) epla, 2009 |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | 973 program 2006cb921607 2006cb604908 national natural science foundation of china 60625402 this work was supported by the 973 program (2006cb921607, 2006cb604908) and the national natural science foundation of china (60625402). |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/7339] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Hao YF,Chen YH,Liu Y,et al. Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells[J]. epl,2009,85(3):art. no. 37003. |
APA | Hao YF,Chen YH,Liu Y,&Wang ZG.(2009).Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells.epl,85(3),art. no. 37003. |
MLA | Hao YF,et al."Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells".epl 85.3(2009):art. no. 37003. |
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