Energy Levels of Hydrogenic Impurities in InAs Quantum Ring

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Energy Levels of Hydrogenic Impurities in InAs Quantum Ring
	Zheng WL ; Li ZW ; Wang XF
刊名	spectroscopy and spectral analysis
	2009
卷号	29 期号:3 页码:607-610
关键词	Effective mass Binding energies Perturbation method Quantum ring
ISSN号	1000-0593
通讯作者	zheng wl chengde teachers coll nationalities dept phys chengde 067000 peoples r china. e-mail address: zhengwenliheda@126.com
中文摘要	the distribution of energy levels of the ground state and the low-lying excited states of hydrogenic impurities in inas quantum ring was investigated by applying the effective mass approximation and the perturbation method. in 2d polar coordinates, the exact solution to the schrodinger equation was used to calculate the perturbation integral in a parabolic confinement potential. the numerical results show that the energy levels of electron are sensitively dependent on the radius of the quantum ring and a minimum exists on account of the parabolic confinement potential. with decreasing the radius, the energy spacing between energy levels increases. the degenerate energy levels of the first excited state for hydrogenic impurities are not relieved, and when the degenerate energy levels are split and the energy spacing will increase with the increase in the radius. the energy spacing between energy levels of electron is also sensitively dependent on the angular frequency and will increase with the increases in it. the degenerate energy levels of the first excited state are not relieved. the degenerate energy levels of the second excited state are relieved partially. the change in angular frequency will have a profound effect upon the calculation of the energy levels of the ground state and the low-lying excited states of hydrogenic impurities in inas quantum ring. the conclusions of this paper will provide important guidance to investigating the optical transitions and spectral structures in quantum ring.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7323]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng WL,Li ZW,Wang XF. Energy Levels of Hydrogenic Impurities in InAs Quantum Ring[J]. spectroscopy and spectral analysis,2009,29(3):607-610.
APA	Zheng WL,Li ZW,&Wang XF.(2009).Energy Levels of Hydrogenic Impurities in InAs Quantum Ring.spectroscopy and spectral analysis,29(3),607-610.
MLA	Zheng WL,et al."Energy Levels of Hydrogenic Impurities in InAs Quantum Ring".spectroscopy and spectral analysis 29.3(2009):607-610.