Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers
	Ding Y ; Fan WJ ; Xu DW ; Tong CZ ; Yoon SF ; Zhang DH ; Zhao LJ ; Wang W ; Liu Y ; Zhu NH
刊名	journal of physics d-applied physics
	2009
卷号	42 期号:8 页码:art. no. 085117
关键词	SPEED SEMICONDUCTOR-LASERS SINGLE-MODE VCSELS TRANSMISSION PERFORMANCE RATIO
ISSN号	0022-3727
通讯作者	ding y nanyang technol univ sch elect & elect engn singapore 639798 singapore. e-mail address: yding@ntu.edu.sg
中文摘要	we present the fabrication of 1.3 mu m waveband p-doped inas quantum dot (qd) vertical cavity surface emitting lasers (vcsels) with an extremely simple process. the continuous-wave saturated output power of 1.1 mw with a lasing wavelength of 1280 nm is obtained at room temperature. the high-speed modulation characteristics of p-doped qd vcsels of two different oxide aperture sizes are investigated and compared. the maximum 3 db modulation bandwidth of 2.5 ghz can be achieved at a bias current of 7 ma for a p-doped qd vcsel with an oxide aperture size of 10 mu m in the small signal frequency response measurements. the crucial factors for the 3 db bandwidth limitation are discussed according to the parameters' extraction from frequency response.
学科主题	光电子学
收录类别	SCI
资助信息	astar singapore-poland bilateral program, serc 0621200015 the authors acknowledge the financial support from the astar singapore-poland bilateral program, serc grant no 0621200015.the authors would like to thank associate professor l f wang, ms j bian of the chinese academy of sciences for their technical support and mr z h liu of nanyang technological university for useful discussions.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7247]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ding Y,Fan WJ,Xu DW,et al. Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers[J]. journal of physics d-applied physics,2009,42(8):art. no. 085117.
APA	Ding Y.,Fan WJ.,Xu DW.,Tong CZ.,Yoon SF.,...&Zhu NH.(2009).Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers.journal of physics d-applied physics,42(8),art. no. 085117.
MLA	Ding Y,et al."Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers".journal of physics d-applied physics 42.8(2009):art. no. 085117.