Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
Jia CH; Zhou XL
刊名journal of physics d-applied physics
2009
卷号42期号:9页码:art. no. 095305
ISSN号0022-3727
通讯作者jia ch chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@red.semi.ac.cn
中文摘要x-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) of the zno/srtio3 heterojunction. it is found that a type-ii band alignment forms at the interface. the vbo and conduction band offset (cbo) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 ev, respectively. the directly obtained vbo value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. furthermore, the cbo value is also consistent with the electrical transport investigations.
学科主题半导体材料
收录类别SCI
资助信息973 program 2006cb604908 2006cb921607 national natural science foundation of china 60625402 this work was supported by the 973 program (2006cb604908, 2006cb921607), and the national natural science foundation of china (60625402).
语种英语
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/7229]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Jia CH,Zhou XL. Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy[J]. journal of physics d-applied physics,2009,42(9):art. no. 095305.
APA Jia CH,&Zhou XL.(2009).Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.journal of physics d-applied physics,42(9),art. no. 095305.
MLA Jia CH,et al."Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy".journal of physics d-applied physics 42.9(2009):art. no. 095305.
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