Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy | |
Jia CH; Zhou XL | |
刊名 | journal of physics d-applied physics |
2009 | |
卷号 | 42期号:9页码:art. no. 095305 |
ISSN号 | 0022-3727 |
通讯作者 | jia ch chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@red.semi.ac.cn |
中文摘要 | x-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) of the zno/srtio3 heterojunction. it is found that a type-ii band alignment forms at the interface. the vbo and conduction band offset (cbo) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 ev, respectively. the directly obtained vbo value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. furthermore, the cbo value is also consistent with the electrical transport investigations. |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | 973 program 2006cb604908 2006cb921607 national natural science foundation of china 60625402 this work was supported by the 973 program (2006cb604908, 2006cb921607), and the national natural science foundation of china (60625402). |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/7229] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Jia CH,Zhou XL. Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy[J]. journal of physics d-applied physics,2009,42(9):art. no. 095305. |
APA | Jia CH,&Zhou XL.(2009).Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.journal of physics d-applied physics,42(9),art. no. 095305. |
MLA | Jia CH,et al."Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy".journal of physics d-applied physics 42.9(2009):art. no. 095305. |
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