EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

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	EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR
	Zhang B ; Chen J ; Wang X ; Wu AM ; Luo JX ; Wang X ; Zhang MA ; Wu YX ; Zhu JJ ; Yang H
刊名	modern physics letters b
	2009
卷号	23 期号:15 页码:1881-1887
关键词	GaN epitaxial lateral overgrowth
ISSN号	0217-9849
通讯作者	zhang b chinese acad sci shanghai inst microsyst & informat technol state key lab funct mat informat shanghai 200050 peoples r china. e-mail address: bozhang@mail.sim.ac.cn
中文摘要	from a single process, gan layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (soi) substrates by metalorganic chemical vapor deposition. the influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (tem). improvement of the crystallin equality of the gan layer was demonstrated by tem and micro-raman spectroscopy. furthermore, the benefits of soi substrates for gan growth are also discussed.
学科主题	半导体物理
收录类别	SCI
资助信息	national fund for distinguished young scholars 59925205 solid-state lighting engineering program of shanghai governmeny 05d211006-3 the authors would like to thank dr.jia-yin sun for many useful discussions. this work was supported by the national fund for distinguished young scholars (grant no.59925205) and the solid-state lighting engineering program of shanghai government (grant no. 05d211006-3).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7115]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang B,Chen J,Wang X,et al. EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR[J]. modern physics letters b,2009,23(15):1881-1887.
APA	Zhang B.,Chen J.,Wang X.,Wu AM.,Luo JX.,...&Yang H.(2009).EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR.modern physics letters b,23(15),1881-1887.
MLA	Zhang B,et al."EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR".modern physics letters b 23.15(2009):1881-1887.