High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs | |
Xu DW ; Yoon SF ; Tong CZ ; Zhao LJ ; Ding Y ; Fan WJ | |
刊名 | ieee photonics technology letters |
2009 | |
卷号 | 21期号:17页码:1211-1213 |
关键词 | Quantum dot (QD) single-mode thermal stability threshold current vertical-cavity surface-emitting lasers (VCSELs) |
ISSN号 | 1041-1135 |
通讯作者 | xu dw nanyang technol univ sch elect & elect engn singapore 639798 singapore. e-mail address: n060085@ntu.edu.sg ; esfyoon@ntu.edu.sg ; cztong@ntu.edu.sg ; ljzhao@red.semi.ac.cn ; yding@ntu.edu.sg ; ewjfan@ntu.edu.sg |
中文摘要 | in this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m inas-gaas quantum-dot (qd) vertical-cavity surface-emitting lasers (vcsels) with p-type modulation-doped qd active region from 20 degrees c to 60 degrees c. the highest output power of 0.435mw and lowest threshold current of 1.2 ma under single-mode operation are achieved. the temperature-dependent output characteristics of qd-vcsels are investigated. single-mode operation with a sidemode suppression ratio of 34 db is observed at room temperature. the critical size of oxide aperture for single-mode operation is discussed. |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | agency for science technology and research (a* star) 0621200015 this work was supported by the agency for science technology and research (a* star) singapore-poland bilateral program under serc grant 0621200015. |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/7011] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu DW,Yoon SF,Tong CZ,et al. High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs[J]. ieee photonics technology letters,2009,21(17):1211-1213. |
APA | Xu DW,Yoon SF,Tong CZ,Zhao LJ,Ding Y,&Fan WJ.(2009).High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs.ieee photonics technology letters,21(17),1211-1213. |
MLA | Xu DW,et al."High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs".ieee photonics technology letters 21.17(2009):1211-1213. |
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