Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

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	Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy
	Zhang XW; Yin ZG; Song HP; You JB
刊名	journal of applied physics
	2009
卷号	106 期号:4 页码:art. no. 043709
关键词	LIGHT-EMITTING-DIODES ZNO ELECTROLUMINESCENCE OFFSETS
ISSN号	0021-8979
通讯作者	you jb chinese acad sci inst semicond key lab semicond mat sci beijing 100083 peoples r china. e-mail address: jbyou@semi.ac.cn
中文摘要	thin sio2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on zno heterojunctions, but little is known of the band offsets of sio2/zno. in this letter, energy band alignment of sio2/zno interface was determined by x-ray photoelectron spectroscopy. the valence band offset delta e-v of sio2/zno interface is determined to be 0.93 +/- 0.15 ev. according to the relationship between the conduction band offset delta e-c and the valence band offset delta e-v delta e-c=e-g(sio2)-e-g(zno)-delta e-v, and taking the room-temperature band-gaps of 9.0 and 3.37 ev for sio2 and zno, respectively, a type-i band-energy alignment of sio2/zno interface with a conduction band offset of 4.70 +/- 0.15 ev is found. the accurate determination of energy band alignment of sio2/zno is helpful for designing of sio2/zno hybrid devices and is also important for understanding their carrier transport properties. (c) 2009 american institute of physics. [doi 10.1063/1.3204028]
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china 50601025 60876031"863" project of china 2009aa03z305 this work was financially supported by the national natural science foundation of china (grant nos. 50601025 and 60876031) and the "863" project of china (grant no. 2009aa03z305). one of the authors (j.b.y.) thanks the cas special grant for postgraduate research innovation and practice.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6975]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang XW,Yin ZG,Song HP,et al. Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy[J]. journal of applied physics,2009,106(4):art. no. 043709.
APA	Zhang XW,Yin ZG,Song HP,&You JB.(2009).Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy.journal of applied physics,106(4),art. no. 043709.
MLA	Zhang XW,et al."Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy".journal of applied physics 106.4(2009):art. no. 043709.