Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well

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	Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
	Lu SL ; Bian LF ; Uesugi M ; Nosho H ; Tackeuchi A ; Niu ZC
刊名	applied physics letters
	2008
卷号	92 期号:5 页码:art. no. 051908
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	0003-6951
通讯作者	lu, sl, waseda univ, dept appl phys, tokyo 1698555, japan. 电子邮箱地址: sllu@waseda.jp
中文摘要	we have investigated the exciton spin relaxation in a gainnas/gaas quantum well. the recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. the free exciton spin relaxation time is measured to be 192 ps at 10 k, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. the dependence of the free exciton spin relaxation time on the temperature above 50 k suggests that both the d'yakonov-perel' and the elliot-yafet effects dominate the spin relaxation process. the temperature independence below 50 k is considered to be due to the spin exchange interaction. the ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers. (c) 2008 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6888]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu SL,Bian LF,Uesugi M,et al. Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well[J]. applied physics letters,2008,92(5):art. no. 051908.
APA	Lu SL,Bian LF,Uesugi M,Nosho H,Tackeuchi A,&Niu ZC.(2008).Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well.applied physics letters,92(5),art. no. 051908.
MLA	Lu SL,et al."Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well".applied physics letters 92.5(2008):art. no. 051908.