A novel butt-joint scheme for the preparation of electro-absorptive lasers

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	A novel butt-joint scheme for the preparation of electro-absorptive lasers
	Pan JQ
刊名	journal of physics d-applied physics
	2008
卷号	41 期号:3 页码:art. no. 035108
关键词	INTEGRATED DFB LASER
ISSN号	0022-3727
通讯作者	cheng, yb, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ybcheng@semi.ac.cn
中文摘要	a 1.55 mu m ingaasp/ingaasp multiple-quantum-well electro-absorption modulator (eam) monolithically integrated with a distributed feedback laser (dfb) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. the threshold current of 25 ma and an extinction ratio of more than 30 db are obtained by using the novel structure. the beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the ingaasp active region. the capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pf.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6854]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. A novel butt-joint scheme for the preparation of electro-absorptive lasers[J]. journal of physics d-applied physics,2008,41(3):art. no. 035108.
APA	Pan JQ.(2008).A novel butt-joint scheme for the preparation of electro-absorptive lasers.journal of physics d-applied physics,41(3),art. no. 035108.
MLA	Pan JQ."A novel butt-joint scheme for the preparation of electro-absorptive lasers".journal of physics d-applied physics 41.3(2008):art. no. 035108.