Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots

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	Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots
	Wang, CD
刊名	acta physica sinica
	2008
卷号	57 期号:2 页码:1091-1096
关键词	spherical quantum dot analytical method plane wave method effective mass
ISSN号	1000-3290
通讯作者	wang, cd, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sirwangdao@sina.com
中文摘要	in this paper, how the dots' radius, at concentration and external electric field affect the single electron energy states in gaas/alxga1-xas spherical quantum dots are discussed in detail. furthermore, the modification of the energy states is calculated when the difference in effective electron mass in gaas and alxga1-xas are considered. in addition, both the analytical method and the plane wave method are used in calculation and the results are compared, showing that they are in good agreement with each other. the results and methods can provide useful information for the future research and potential applications of quantum dots.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6838]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, CD. Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots[J]. acta physica sinica,2008,57(2):1091-1096.
APA	Wang, CD.(2008).Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots.acta physica sinica,57(2),1091-1096.
MLA	Wang, CD."Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots".acta physica sinica 57.2(2008):1091-1096.