Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab
	Ren G ; Zheng WH ; Zhang YJ ; Xing MX ; Wang K ; Du XY ; Chen LH
刊名	chinese physics letters
	2008
卷号	25 期号:3 页码:981-984
关键词	MODE
ISSN号	0256-307x
通讯作者	ren, g, chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china. 电子邮箱地址: whzheng@semi.ac.cn
中文摘要	we fabricate and investigate two-dimensional photonic crystal h3 microcavities in an ingaasp slab. the lasing action at room temperature is observed. the lasering threshold is 7mw under the pulsed pump of 0.75% duty cycle. the q factor and the lasing mode characteristics are simulated by three-dimensional finite difference time domain method. the simulation result matches well with the experiment.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6782]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ren G,Zheng WH,Zhang YJ,et al. Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab[J]. chinese physics letters,2008,25(3):981-984.
APA	Ren G.,Zheng WH.,Zhang YJ.,Xing MX.,Wang K.,...&Chen LH.(2008).Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab.chinese physics letters,25(3),981-984.
MLA	Ren G,et al."Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab".chinese physics letters 25.3(2008):981-984.