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	Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering
	Xuhu Yu; Jin Ma; Feng Ji; Yuheng Wang; Xijian Zhang; Honglei Ma
刊名	Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films
	2005
期号	1页码:296-300
关键词	sputtering zinc oxide electrical properties and measurement annealing
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6312983
专题	山东大学
作者单位	School of Physics and Microelectronics, Shandong University, Jinan 250100, China
推荐引用方式 GB/T 7714	Xuhu Yu,Jin Ma,Feng Ji,et al. Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering[J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1):296-300.
APA	Xuhu Yu,Jin Ma,Feng Ji,Yuheng Wang,Xijian Zhang,&Honglei Ma.(2005).Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering.Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films(1),296-300.
MLA	Xuhu Yu,et al."Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering".Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films .1(2005):296-300.

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