High performance 1689-nm quantum well diode lasers

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	High performance 1689-nm quantum well diode lasers
	Duan, YP ; Lin, T ; Wang, CL ; Chong, F ; Ma, XY
刊名	chinese optics letters
	2007
卷号	5 期号:10 页码:585-587
关键词	MOLECULAR-BEAM EPITAXY MU-M ROOM-TEMPERATURE HIGH-POWER OPERATION CW
ISSN号	1671-7694
通讯作者	duan, yp, nw univ xian, dept phys, xian 710069, peoples r china. 电子邮箱地址: yupengduan@sina.com
中文摘要	1689-nm diode lasers used in medical apparatus have been fabricated and characterized. the lasers had pnpn inp current confinement structure, and the active region consisted of 5 pairs of ingaas quantum wells and ingaasp barriers. stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. after being cavity coated. and transistor outline (to) packaged, the lasers showed high performance in practice. the threshold current was about 13 +/- 4 ma, the operation current and the lasing spectrum were about 58 6 ma and 1689 +/- 6 nm at 6-mw output power, respectively. moreover, the maximum output power of the lasers was above 20 mw.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6724]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Duan, YP,Lin, T,Wang, CL,et al. High performance 1689-nm quantum well diode lasers[J]. chinese optics letters,2007,5(10):585-587.
APA	Duan, YP,Lin, T,Wang, CL,Chong, F,&Ma, XY.(2007).High performance 1689-nm quantum well diode lasers.chinese optics letters,5(10),585-587.
MLA	Duan, YP,et al."High performance 1689-nm quantum well diode lasers".chinese optics letters 5.10(2007):585-587.