Strong visible and infrared photoluminescence from Er-implanted silicon nitride films | |
Chen P | |
刊名 | journal of physics d-applied physics |
2008 | |
卷号 | 41期号:13页码:art. no. 135101 |
关键词 | 1.54 MU-M |
ISSN号 | 0022-3727 |
通讯作者 | ding, wc, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: wcd04@semi.ac.cn |
中文摘要 | silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. the films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). after high temperature annealing, strong visible and infrared photoluminescence (pl) was observed. the visible pl consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (si-ncs) and si-nc/sinx interface states. raman spectra and hrtem measurements have been performed to confirm the existence of si-ncs. the implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m pl. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/6618] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chen P. Strong visible and infrared photoluminescence from Er-implanted silicon nitride films[J]. journal of physics d-applied physics,2008,41(13):art. no. 135101. |
APA | Chen P.(2008).Strong visible and infrared photoluminescence from Er-implanted silicon nitride films.journal of physics d-applied physics,41(13),art. no. 135101. |
MLA | Chen P."Strong visible and infrared photoluminescence from Er-implanted silicon nitride films".journal of physics d-applied physics 41.13(2008):art. no. 135101. |
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