Modelling and analysis of modal behaviour in SOI slot waveguides

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	Modelling and analysis of modal behaviour in SOI slot waveguides
	Liu Y ; Xu XJ ; Chen SW ; Yu JZ
刊名	chinese physics letters
	2008
卷号	25 期号:8 页码:2918-2921
关键词	CONFINING LIGHT
ISSN号	0256-307x
通讯作者	liu, y, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: liuyan@red.semi.ac.cn
中文摘要	mode behaviour for soi slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method (mmm). only the quasi-te mode is investigated. waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. comparison between the effective index method and our side loss method shows that our single mode condition is creditable. the optical power confinement in slot region for the quasi-te mode is also studied and presented. we demonstrate that the maximum achievable optical power confinement p-slot and the maximum normalized average optical intensity i-slot are 42% and 26 mu m(-2), respectively.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6530]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Y,Xu XJ,Chen SW,et al. Modelling and analysis of modal behaviour in SOI slot waveguides[J]. chinese physics letters,2008,25(8):2918-2921.
APA	Liu Y,Xu XJ,Chen SW,&Yu JZ.(2008).Modelling and analysis of modal behaviour in SOI slot waveguides.chinese physics letters,25(8),2918-2921.
MLA	Liu Y,et al."Modelling and analysis of modal behaviour in SOI slot waveguides".chinese physics letters 25.8(2008):2918-2921.