Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures
	Zhao, HQ ; Kasai, S ; Hashizume, T ; Wu, NJ
刊名	ieice transactions on electronics
	2008
卷号	e91c 期号:7 页码:1063-1069
关键词	Schottky wrap gate (WPG) GaAs hexagonal nanowire network flip flop (FF) ring oscillator
ISSN号	0916-8524
通讯作者	zhao, hq, hokkaido univ, sapporo, hokkaido 0608628, japan. 电子邮箱地址: zhao@rciqe.hokudai.ac.jp
中文摘要	for realization of hexagonal bdd-based digital systems, active and sequential circuits including inverters, flip flops and ring oscillators are designed and fabricated on gaas-based hexagonal nanowire networks controlled by schottky wrap gates (wpgs), and their operations are characterized. fabricated inverters show comparatively high transfer gain of more than 10. clear and correct operation of hexagonal set-reset flip flops (sr-ffs) is obtained at room temperature. fabricated hexagonal d-type flip flop (d-ff) circuits integrating twelve wpg field effect transistors (fets) show capturing input signal by triggering although the output swing is small. oscillatory output is successfully obtained in a fabricated 7-stage hexagonal ring oscillator. obtained results confirm that a good possibility to realize practical digital systems can be implemented by the present circuit approach.
学科主题	微电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6526]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, HQ,Kasai, S,Hashizume, T,et al. Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures[J]. ieice transactions on electronics,2008,e91c(7):1063-1069.
APA	Zhao, HQ,Kasai, S,Hashizume, T,&Wu, NJ.(2008).Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures.ieice transactions on electronics,e91c(7),1063-1069.
MLA	Zhao, HQ,et al."Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures".ieice transactions on electronics e91c.7(2008):1063-1069.