Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy
Zhang, RQ ; Guo, Y ; Song, HP ; Liu, XL ; Yang, SY ; Wei, HY ; Zhu, QS ; Wang, ZG
刊名applied physics letters
2008
卷号93期号:12页码:art. no. 122111
关键词PHOTOEMISSION SPECTROSCOPY GAP STATES CONTINUUM LINEUPS INN
ISSN号0003-6951
通讯作者zhang, rq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangriq@semi.ac.cn ; xlliu@semi.ac.cn
中文摘要the valence band offset (vbo) of the inn/gaas heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 ev. the conduction band offset is deduced from the known vbo value to be 1.66 +/- 0.23 ev, and a type-ii band alignment forms at the inn/gaas heterojunction. (c) 2008 american institute of physics.
学科主题半导体物理
收录类别SCI
资助信息national science foundation of china 60506002 60776015special funds for major state basic research project (973 program) of china 2006cb60490 863 high technology r&d program of china 2007aa03z402 2007aa03z451 this work was supported by the national science foundation of china (nos. 60506002 and 60776015), the special funds for major state basic research project (973 program) of china (no. 2006cb60490), and the 863 high technology r&d program of china (nos. 2007aa03z402 and 2007aa03z451).
语种英语
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/6436]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Zhang, RQ,Guo, Y,Song, HP,et al. Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy[J]. applied physics letters,2008,93(12):art. no. 122111.
APA Zhang, RQ.,Guo, Y.,Song, HP.,Liu, XL.,Yang, SY.,...&Wang, ZG.(2008).Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy.applied physics letters,93(12),art. no. 122111.
MLA Zhang, RQ,et al."Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy".applied physics letters 93.12(2008):art. no. 122111.
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