Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers | |
Islam MR ; Chen NF ; Yamada M | |
刊名 | crystal research and technology |
2008 | |
卷号 | 43期号:10页码:1091-1096 |
关键词 | Raman scattering |
ISSN号 | 0232-1300 |
通讯作者 | islam, mr, khulna univ engn & technol, dept elect & elect engn, khulna 9203, bangladesh. 电子邮箱地址: mri@eee.kuet.ac.bd |
中文摘要 | raman scattering (rs) experiments have been performed for simultaneous determination of mn composition and strain in ga1-xmnxsb thin films grown on gasb substrate by liquid phase epitaxy technique. the raman spectra obtained from various ga1-xmnxsb samples show only gasb-like phonon modes whose frequency positions are found to have mn compositional dependence. with the combination of epilayer strain model, rs and energy dispersive x-ray (edx) experiments, the compositional dependence of gasb-like lo phonon frequency is proposed both in strained and unstrained conditions. the proposed relationships are used to evaluate mn composition and strain from the ga1-xmnxsb samples. the results obtained from the rs data are found to be in good agreement with those determined independently by the edx analysis. furthermore, the frequency positions of mnsb-like phonon modes are suggested by reduced-mass model. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/6416] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Islam MR,Chen NF,Yamada M. Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers[J]. crystal research and technology,2008,43(10):1091-1096. |
APA | Islam MR,Chen NF,&Yamada M.(2008).Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers.crystal research and technology,43(10),1091-1096. |
MLA | Islam MR,et al."Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers".crystal research and technology 43.10(2008):1091-1096. |
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