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	Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering
	Lv M; Xiu XW; Pang ZY; Dai Y; Han SH
刊名	Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials
	2006
卷号	252期号:16页码:5687-5692
关键词	zirconium zinc oxide sputtering transparent conducting films LIGHT-EMITTING-DIODES ZNO-AL FILMS THIN-FILMS DEPENDENCE THICKNESS DEVICES
DOI	10.1016/j.apsusc.2005.07.042
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6284069
专题	山东大学
作者单位	1.School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 Shandong, China 2.[ Xiu, X
推荐引用方式 GB/T 7714	Lv M,Xiu XW,Pang ZY,et al. Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J]. Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006,252(16):5687-5692.
APA	Lv M,Xiu XW,Pang ZY,Dai Y,&Han SH.(2006).Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering.Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,252(16),5687-5692.
MLA	Lv M,et al."Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering".Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials 252.16(2006):5687-5692.

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