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	Band structure of silicon and germanium thin films based on first principles
	Wu XK(吴学科); Huang WQ(黄伟其); Huang ZM(黄忠梅); Qin CJ(秦朝建); Dong TG(董泰阁); Wang G(王刚); Tang YL(唐延林)
	2017
卷号	26期号:3页码:478-482
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6250280
专题	贵州大学
作者单位	1.[1]College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China 2.[2]Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China 3.[3]State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Strnctures , and Department of Physics, Fudan University, Shanghai 200433, China 4.[4]State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
推荐引用方式 GB/T 7714	Wu XK,Huang WQ,Huang ZM,et al. Band structure of silicon and germanium thin films based on first principles[J],2017,26(3):478-482.
APA	Wu XK.,Huang WQ.,Huang ZM.,Qin CJ.,Dong TG.,...&Tang YL.(2017).Band structure of silicon and germanium thin films based on first principles.,26(3),478-482.
MLA	Wu XK,et al."Band structure of silicon and germanium thin films based on first principles".26.3(2017):478-482.

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