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	Design of broadside-coupled parallel line millimetre-wave filters by standard 0.18-mu m complimentary metal oxide semiconductor technology
	Lin, S ; Cui, H ; Wu, L ; Wang, W ; Sun, X
刊名	IET MICROWAVES ANTENNAS & PROPAGATION
	2012
卷号	6期号:1页码:72-78
ISSN号	1751-8725
通讯作者	Lin, S (reprint author), Chinese Acad Sci, SIMIT, Shanghai 200050, Peoples R China.
中文摘要	An equivalent circuit technique is used to design a class of compacted millimetre-wave band-pass filters in the standard 0.18-mu m complimentary metal oxide semiconductor (CMOS) process. Thin film microstrip is fabricated on a lossy silicon substrate to r
学科主题	Engineering; Telecommunications
原文出处	10.1049/iet-map.2011.0024
公开日期	2013-04-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115073]
专题	上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文
推荐引用方式 GB/T 7714	Lin, S,Cui, H,Wu, L,et al. Design of broadside-coupled parallel line millimetre-wave filters by standard 0.18-mu m complimentary metal oxide semiconductor technology[J]. IET MICROWAVES ANTENNAS & PROPAGATION,2012,6(1):72-78.
APA	Lin, S,Cui, H,Wu, L,Wang, W,&Sun, X.(2012).Design of broadside-coupled parallel line millimetre-wave filters by standard 0.18-mu m complimentary metal oxide semiconductor technology.IET MICROWAVES ANTENNAS & PROPAGATION,6(1),72-78.
MLA	Lin, S,et al."Design of broadside-coupled parallel line millimetre-wave filters by standard 0.18-mu m complimentary metal oxide semiconductor technology".IET MICROWAVES ANTENNAS & PROPAGATION 6.1(2012):72-78.

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