Improved turn-off capability of IGBT with LIHT structure | |
Wu, Yuzhou; Li, Zehong; Cui, Xiaonan; Li, Zhaoji; Zeng, Xiao; Gao, Wei; Zhang, Jinping; Ren, Min; Zhang, Bo; Yang, Fashun | |
2017 | |
会议日期 | July 4, 2017 - July 7, 2017 |
会议地点 | Chengdu, China |
会议录 | 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
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URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6238459 |
专题 | 贵州大学 |
作者单位 | 1.[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, China 2.[2] Guizhou University, Guiyang, China 3.[3] Chengdu University of Information Technology, Chengdu, China 4.[4] China West Normal University, Nanchong, China |
推荐引用方式 GB/T 7714 | Wu, Yuzhou,Li, Zehong,Cui, Xiaonan,et al. Improved turn-off capability of IGBT with LIHT structure[C]. 见:. Chengdu, China. July 4, 2017 - July 7, 2017. |
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