Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength

	Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength
	Wang, DL ; Yuan, Y ; Luo, L
刊名	IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
	2012
卷号	2 期号:8 页码:1275-1279
关键词	Indium additive influence microstructural change shear strength Sn-Ag-In solder bumps
ISSN号	2156-3950
通讯作者	Wang, DL (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China.
中文摘要	This paper focused on the feasibility of preparing Sn-Ag-In ternary solder bumps with small size by two-step electroplating. The interfacial reaction and shear strength between three different solders (Sn2.2Ag, Sn1.8Ag9.4In, and Sn1.6Ag21.7In) and Cu unde
学科主题	Engineering; Materials Science
收录类别	2012SCI-077
原文出处	10.1109/TCPMT.2012.2184110
语种	英语
公开日期	2013-04-23
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114906]
专题	上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式 GB/T 7714	Wang, DL,Yuan, Y,Luo, L. Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength[J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY,2012,2(8):1275-1279.
APA	Wang, DL,Yuan, Y,&Luo, L.(2012).Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength.IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY,2(8),1275-1279.
MLA	Wang, DL,et al."Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength".IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 2.8(2012):1275-1279.