Realization of 850 V breakdown voltage LDMOS on Simbond SOI

	Realization of 850 V breakdown voltage LDMOS on Simbond SOI
	Wang, ZJ ; Cheng, XH ; He, DW ; Xia, C ; Xu, DW ; Yu, YH ; Zhang, D ; Wang, YY ; Lv, YQ ; Gong, DW ; Shao, K
刊名	MICROELECTRONIC ENGINEERING
	2012
卷号	91 页码:102-105
关键词	SOI Simbond High voltage device LDMOS
ISSN号	0167-9317
通讯作者	Wang, ZJ (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Changning Rd 865, Shanghai 200050, Peoples R China.
中文摘要	In this paper, 850 V breakdown voltage LDMOS fabricated on Simbond SOI wafer are reported. Simbond SOI wafers with 1.5 mu m top silicon, 3 mu m buried oxide layer, and n-type heavy doped handle wafers are used. In order to achieve uniform lateral electric
学科主题	Engineering; Science & Technology - Other Topics; Optics; Physics
收录类别	2012SCI-181
原文出处	10.1016/j.mee.2011.10.014
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114821]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, ZJ,Cheng, XH,He, DW,et al. Realization of 850 V breakdown voltage LDMOS on Simbond SOI[J]. MICROELECTRONIC ENGINEERING,2012,91:102-105.
APA	Wang, ZJ.,Cheng, XH.,He, DW.,Xia, C.,Xu, DW.,...&Shao, K.(2012).Realization of 850 V breakdown voltage LDMOS on Simbond SOI.MICROELECTRONIC ENGINEERING,91,102-105.
MLA	Wang, ZJ,et al."Realization of 850 V breakdown voltage LDMOS on Simbond SOI".MICROELECTRONIC ENGINEERING 91(2012):102-105.