Phase change behaviors of Zn-doped Ge2Sb2Te5 films

	Phase change behaviors of Zn-doped Ge2Sb2Te5 films
	Wang, GX ; Nie, QH ; Shen, X ; Wang, RP ; Wu, LC ; Fu, J ; Xu, TF ; Dai, SX
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	101 期号:5 页码:51906
ISSN号	0003-6951
通讯作者	Wang, GX (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China.
中文摘要	Zn-doped Ge2Sb2Te5 phase-change materials have been investigated for phase change memory applications. Zn-15.16(Ge2Sb2Te5)(84.84) phase change film exhibits a higher crystallization temperature (similar to 258 degrees C), wider band gap (similar to 0.78 e
学科主题	Physics
收录类别	2012SCI-085
原文出处	10.1063/1.4742144
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114812]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, GX,Nie, QH,Shen, X,et al. Phase change behaviors of Zn-doped Ge2Sb2Te5 films[J]. APPLIED PHYSICS LETTERS,2012,101(5):51906.
APA	Wang, GX.,Nie, QH.,Shen, X.,Wang, RP.,Wu, LC.,...&Dai, SX.(2012).Phase change behaviors of Zn-doped Ge2Sb2Te5 films.APPLIED PHYSICS LETTERS,101(5),51906.
MLA	Wang, GX,et al."Phase change behaviors of Zn-doped Ge2Sb2Te5 films".APPLIED PHYSICS LETTERS 101.5(2012):51906.