Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

	Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
	Luo, JX ; Chen, J ; Zhou, JH ; Wu, QQ ; Chai, Z ; Yu, T ; Wang, X
刊名	CHINESE PHYSICS B
	2012
卷号	21 期号:5 页码:56602
关键词	floating body effect hysteresis effect back gate bias partially depleted (PD) SOI
ISSN号	1674-1056
通讯作者	Chen, J (reprint author), Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要	The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I-D hysteresis has been developed to clarify the
学科主题	Physics
收录类别	2012SCI-129
原文出处	10.1088/1674-1056/21/5/056602
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114782]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Luo, JX,Chen, J,Zhou, JH,et al. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs[J]. CHINESE PHYSICS B,2012,21(5):56602.
APA	Luo, JX.,Chen, J.,Zhou, JH.,Wu, QQ.,Chai, Z.,...&Wang, X.(2012).Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs.CHINESE PHYSICS B,21(5),56602.
MLA	Luo, JX,et al."Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs".CHINESE PHYSICS B 21.5(2012):56602.