Growth of graphene-like thin films at low temperature by dual-frequency capacitively coupled plasma

	Growth of graphene-like thin films at low temperature by dual-frequency capacitively coupled plasma
	Xu, YJ ; Wu, XM ; Ye, C
刊名	APPLIED SURFACE SCIENCE
	2012
卷号	258 期号:19 页码:7751-7754
关键词	Graphene-like films DF-CCP CVD Annealing
ISSN号	0169-4332
通讯作者	Wu, XM (reprint author), Soochow Univ, Key Lab Thin Films Jiangsu, Suzhou 215006, Peoples R China.
中文摘要	Growth of graphene-like films at low temperature on 2 cm x 2 cm glass substrate without using any metallic catalyst was developed by dual-frequency capacitively coupled plasma (DF-CCP) enhanced chemical vapor deposition (CVD), and then annealed at 300-500
学科主题	Chemistry; Materials Science; Physics
收录类别	2012SCI-088
原文出处	10.1016/j.apsusc.2012.04.133
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114777]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Xu, YJ,Wu, XM,Ye, C. Growth of graphene-like thin films at low temperature by dual-frequency capacitively coupled plasma[J]. APPLIED SURFACE SCIENCE,2012,258(19):7751-7754.
APA	Xu, YJ,Wu, XM,&Ye, C.(2012).Growth of graphene-like thin films at low temperature by dual-frequency capacitively coupled plasma.APPLIED SURFACE SCIENCE,258(19),7751-7754.
MLA	Xu, YJ,et al."Growth of graphene-like thin films at low temperature by dual-frequency capacitively coupled plasma".APPLIED SURFACE SCIENCE 258.19(2012):7751-7754.