An All-Silicon Passive Optical Diode

	An All-Silicon Passive Optical Diode
	Fan, L ; Wang, J ; Varghese, LT ; Shen, H ; Niu, B ; Xuan, Y ; Weiner, AM ; Qi, MH
刊名	SCIENCE
	2012
卷号	335 期号:6067 页码:447-450
ISSN号	0036-8075
通讯作者	Qi, MH (reprint author), Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA.
中文摘要	A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within tel
学科主题	Science & Technology - Other Topics
收录类别	2012SCI-213
原文出处	10.1126/science.1214383
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114739]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Fan, L,Wang, J,Varghese, LT,et al. An All-Silicon Passive Optical Diode[J]. SCIENCE,2012,335(6067):447-450.
APA	Fan, L.,Wang, J.,Varghese, LT.,Shen, H.,Niu, B.,...&Qi, MH.(2012).An All-Silicon Passive Optical Diode.SCIENCE,335(6067),447-450.
MLA	Fan, L,et al."An All-Silicon Passive Optical Diode".SCIENCE 335.6067(2012):447-450.