An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

	An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
	Cai, DL ; Chen, HP ; Wang, Q ; Chen, YF ; Song, ZT ; Wu, GP ; Feng, SL
刊名	IEEE ELECTRON DEVICE LETTERS
	2012
卷号	33 期号:9 页码:1270-1272
关键词	Complementary metal-oxide-semiconductor (CMOS) endurance phase-change random access memory (PCRAM) phase-change resistor resistor-on-via-stacked-plug (RVP)
ISSN号	0741-3106
通讯作者	Cai, DL (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要	In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-. Plug (RVP) storage cell structure. This phase-change resistor is formed after CMOS log
学科主题	Engineering
收录类别	2012SCI-058
原文出处	10.1109/LED.2012.2204952
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114738]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cai, DL,Chen, HP,Wang, Q,et al. An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(9):1270-1272.
APA	Cai, DL.,Chen, HP.,Wang, Q.,Chen, YF.,Song, ZT.,...&Feng, SL.(2012).An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell.IEEE ELECTRON DEVICE LETTERS,33(9),1270-1272.
MLA	Cai, DL,et al."An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell".IEEE ELECTRON DEVICE LETTERS 33.9(2012):1270-1272.