Investigation on deep energy levels formed by sulphur implantation into silicon

	Investigation on deep energy levels formed by sulphur implantation into silicon
	Gao, Li-Peng ; Han, Pei-De ; Mao, Xue ; Fan, Yu-Jie ; Hu, Shao-Xu
刊名	rengong jingti xuebao/journal of synthetic crystals
	2012
卷号	41 期号:suppl. 1 页码:372-375
学科主题	光电子学
收录类别	EI
语种	英语
公开日期	2013-04-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23930]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Gao, Li-Peng,Han, Pei-De,Mao, Xue,et al. Investigation on deep energy levels formed by sulphur implantation into silicon[J]. rengong jingti xuebao/journal of synthetic crystals,2012,41(suppl. 1):372-375.
APA	Gao, Li-Peng,Han, Pei-De,Mao, Xue,Fan, Yu-Jie,&Hu, Shao-Xu.(2012).Investigation on deep energy levels formed by sulphur implantation into silicon.rengong jingti xuebao/journal of synthetic crystals,41(suppl. 1),372-375.
MLA	Gao, Li-Peng,et al."Investigation on deep energy levels formed by sulphur implantation into silicon".rengong jingti xuebao/journal of synthetic crystals 41.suppl. 1(2012):372-375.