The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes

	The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes
	Qiao YB (Qiao, Yanbin) ; Feng SW (Feng, Shiwei) ; Xiong C (Xiong, Cong) ; Ma XY (Ma, Xiaoyu) ; Zhu H (Zhu, Hui) ; Guo CS (Guo, Chunsheng) ; Wei GH (Wei, Guanghua)
刊名	journal of applied physics
	2012
卷号	112 期号:11 页码:113104
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2013-04-18
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23884]
专题	半导体研究所_光电子器件国家工程中心
推荐引用方式 GB/T 7714	Qiao YB ,Feng SW ,Xiong C ,et al. The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes[J]. journal of applied physics,2012,112(11):113104.
APA	Qiao YB .,Feng SW .,Xiong C .,Ma XY .,Zhu H .,...&Wei GH .(2012).The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes.journal of applied physics,112(11),113104.
MLA	Qiao YB ,et al."The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes".journal of applied physics 112.11(2012):113104.