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	Characterization at atomic scale of epitaxially grown In0.1Ga0.86As/GaAs(4×3) surface
	Shang, Lintao; Luo, Zijiang; Zhou, Xun; Guo, Xiang; Zhang, Bichan; He, Hao; He, Yequan; Ding, Zhao
	2012
卷号	32期号:3页码:256-262
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6220747
专题	贵州大学
作者单位	1.[1] College of Physics, Guizhou University, Guiyang 550025, China 2.[2] Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China
推荐引用方式 GB/T 7714	Shang, Lintao,Luo, Zijiang,Zhou, Xun,et al. Characterization at atomic scale of epitaxially grown In0.1Ga0.86As/GaAs(4×3) surface[J],2012,32(3):256-262.
APA	Shang, Lintao.,Luo, Zijiang.,Zhou, Xun.,Guo, Xiang.,Zhang, Bichan.,...&Ding, Zhao.(2012).Characterization at atomic scale of epitaxially grown In0.1Ga0.86As/GaAs(4×3) surface.,32(3),256-262.
MLA	Shang, Lintao,et al."Characterization at atomic scale of epitaxially grown In0.1Ga0.86As/GaAs(4×3) surface".32.3(2012):256-262.

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