| Molecular dynamics simulation of the energy effect SiH3+ interaction with Si surface | |
| Tian Shu-ping; Sun Wei-zhong; Zhang yan-po; Zhao Cheng-li; Chen Feng; F.Gou | |
| 2011 | |
| 会议日期 | 2011-8-8 |
| 会议地点 | 黄山 |
| 关键词 | Molecular dynamics simulation deposition rate hydrogenated amorphous silicon film film component |
| 会议录 | 第十五届全国等离子体科学技术会议论文集
 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6214931 |
| 专题 | 贵州大学 |
| 作者单位 | 1.[1]Key Lab of Radiation Physics&Technology Ministry of Education. Chengdu 610064,China College of science,Guizhou University,Guiyang 550025,China Key Lab of Radiation Physics&Technology Ministry of Education. Chengdu 610064,China 2.[2]FOM Institute for Plasma Physics,3439 MN Nieuwegein,the Netherlands |
| 推荐引用方式 GB/T 7714 | Tian Shu-ping,Sun Wei-zhong,Zhang yan-po,et al. Molecular dynamics simulation of the energy effect SiH3+ interaction with Si surface[C]. 见:. 黄山. 2011-8-8. |
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