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	Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates
	Shi, Feng[1]; Wang, Zouping[1]; Xue, Chengshan[1]
	2010
卷号	256期号:16页码:4883-4887
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6114855
专题	山东师范大学
作者单位	[1] College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
推荐引用方式 GB/T 7714	Shi, Feng[1],Wang, Zouping[1],Xue, Chengshan[1]. Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates[J],2010,256(16):4883-4887.
APA	Shi, Feng[1],Wang, Zouping[1],&Xue, Chengshan[1].(2010).Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates.,256(16),4883-4887.
MLA	Shi, Feng[1],et al."Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates".256.16(2010):4883-4887.

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