Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates | |
Shi, Feng[1]; Wang, Zouping[1]; Xue, Chengshan[1] | |
2010 | |
卷号 | 256期号:16页码:4883-4887 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6114855 |
专题 | 山东师范大学 |
作者单位 | [1] College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China |
推荐引用方式 GB/T 7714 | Shi, Feng[1],Wang, Zouping[1],Xue, Chengshan[1]. Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates[J],2010,256(16):4883-4887. |
APA | Shi, Feng[1],Wang, Zouping[1],&Xue, Chengshan[1].(2010).Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates.,256(16),4883-4887. |
MLA | Shi, Feng[1],et al."Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates".256.16(2010):4883-4887. |
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