TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

	TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
	Zhao J. L. ; Gao Y. ; Gu T. G. ; Sutton M. ; Liang J. C.
刊名	Journal of Materials Science Letters
	1993
卷号	12 期号:1 页码:53-55
ISSN号	0261-8028
收录类别	SCI
语种	英语
公开日期	2013-03-27
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/34171]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao J. L.,Gao Y.,Gu T. G.,et al. TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION[J]. Journal of Materials Science Letters,1993,12(1):53-55.
APA	Zhao J. L.,Gao Y.,Gu T. G.,Sutton M.,&Liang J. C..(1993).TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION.Journal of Materials Science Letters,12(1),53-55.
MLA	Zhao J. L.,et al."TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION".Journal of Materials Science Letters 12.1(1993):53-55.