TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION | |
Zhao J. L. ; Gao Y. ; Gu T. G. ; Sutton M. ; Liang J. C. | |
刊名 | Journal of Materials Science Letters
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1993 | |
卷号 | 12期号:1页码:53-55 |
ISSN号 | 0261-8028 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-03-27 |
内容类型 | 期刊论文 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/34171] ![]() |
专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhao J. L.,Gao Y.,Gu T. G.,et al. TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION[J]. Journal of Materials Science Letters,1993,12(1):53-55. |
APA | Zhao J. L.,Gao Y.,Gu T. G.,Sutton M.,&Liang J. C..(1993).TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION.Journal of Materials Science Letters,12(1),53-55. |
MLA | Zhao J. L.,et al."TEMPERATURE-DEPENDENCE OF DEEP-LEVEL PHOTOLUMINESCENCE IN GA0.5IN0.5P EPILAYERS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION".Journal of Materials Science Letters 12.1(1993):53-55. |
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