| Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature | |
| Sun, ZC; Cao, WT; Wei, QQ; Xue, CS | |
| 2004 | |
| 卷号 | 33期号:8页码:861-863 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000223867600020 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6108644 |
| 专题 | 山东师范大学 |
| 作者单位 | [1]Shandong Normal Univ, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, ZC,Cao, WT,Wei, QQ,et al. Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature[J],2004,33(8):861-863. |
| APA | Sun, ZC,Cao, WT,Wei, QQ,&Xue, CS.(2004).Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature.,33(8),861-863. |
| MLA | Sun, ZC,et al."Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature".33.8(2004):861-863. |
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