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	Studies on the application of n-InGaZnO/p-Si heterojunctions in active pixel sensor as photodiode
	Zhang, GL; Zeng, Y; Yan, YM; Leng, YQ
刊名	JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
	2014
卷号	Vol.16 No.7-8页码:919-924
ISSN号	1454-4164
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6103880
专题	湖南大学
作者单位	Hunan Univ, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhang, GL,Zeng, Y,Yan, YM,et al. Studies on the application of n-InGaZnO/p-Si heterojunctions in active pixel sensor as photodiode[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2014,Vol.16 No.7-8:919-924.
APA	Zhang, GL,Zeng, Y,Yan, YM,&Leng, YQ.(2014).Studies on the application of n-InGaZnO/p-Si heterojunctions in active pixel sensor as photodiode.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,Vol.16 No.7-8,919-924.
MLA	Zhang, GL,et al."Studies on the application of n-InGaZnO/p-Si heterojunctions in active pixel sensor as photodiode".JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Vol.16 No.7-8(2014):919-924.

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