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	Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo, W, Nb; X = S, Se) monolayers with grain boundaries
	Wang, Zhiguo; Su, Qiulei; Yin, G.Q.; Shi, Jianjian; Deng, Huiqiu; Guan, J.; Wu, M.P.; Zhou, Y.L.; Lou, H.L.; Fu, Y.Q.
刊名	Materials Chemistry and Physics
	2014
卷号	Vol.147 No.3页码:1068-1073
关键词	Ab initio calculations Band-structure Nanostructures Grain boundaries Layered transition metal dichalcogenides
ISSN号	0254-0584
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6102950
专题	湖南大学
作者单位	1.School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China 2.Joint Laboratory of Police Equipment of UESTC, Chengdu, 610054, China 3.Department of Applied Physics, Hunan University, Changsha, 41
推荐引用方式 GB/T 7714	Wang, Zhiguo,Su, Qiulei,Yin, G.Q.,et al. Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo, W, Nb; X = S, Se) monolayers with grain boundaries[J]. Materials Chemistry and Physics,2014,Vol.147 No.3:1068-1073.
APA	Wang, Zhiguo.,Su, Qiulei.,Yin, G.Q..,Shi, Jianjian.,Deng, Huiqiu.,...&Fu, Y.Q..(2014).Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo, W, Nb; X = S, Se) monolayers with grain boundaries.Materials Chemistry and Physics,Vol.147 No.3,1068-1073.
MLA	Wang, Zhiguo,et al."Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo, W, Nb; X = S, Se) monolayers with grain boundaries".Materials Chemistry and Physics Vol.147 No.3(2014):1068-1073.

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