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Structure and physical properties of Bi4Ti3O12 thin films prepared by APMOCVD and RTA
Wang, H; Wang, Z; Shang, SX; Wang, M
1998
会议名称Ferroelectric Thin Films VI Symposium, at the 1997 MRS Fall Meeting
会议日期DEC 01-05, 1997
卷号493
页码477-480
收录类别CPCI-S ; SCOPUS
会议录FERROELECTRIC THIN FILMS VI
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/6090082
专题山东大学
作者单位Shandong Univ, Inst Crystal Mat, Jinan 250100, Peoples R China.
推荐引用方式
GB/T 7714
Wang, H,Wang, Z,Shang, SX,et al. Structure and physical properties of Bi4Ti3O12 thin films prepared by APMOCVD and RTA[C]. 见:Ferroelectric Thin Films VI Symposium, at the 1997 MRS Fall Meeting. DEC 01-05, 1997.
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