Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers

	Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
	Sun HH (Sun He-Hui) ; Guo FY (Guo Feng-Yun) ; Li DY (Li Deng-Yue) ; Wang L (Wang Lu) ; Zhao DG (Zhao De-Gang) ; Zhao LC (Zhao Lian-Cheng)
刊名	chinese physics letters
	2012
卷号	29 期号:9 页码:096101
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23847]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Sun HH ,Guo FY ,Li DY ,et al. Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers[J]. chinese physics letters,2012,29(9):096101.
APA	Sun HH ,Guo FY ,Li DY ,Wang L ,Zhao DG ,&Zhao LC .(2012).Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers.chinese physics letters,29(9),096101.
MLA	Sun HH ,et al."Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers".chinese physics letters 29.9(2012):096101.