Quantum tunneling through planar p-n junctions in HgTe quantum wells

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	Quantum tunneling through planar p-n junctions in HgTe quantum wells
	Zhang LB (Zhang L. B.) ; Chang K (Chang Kai) ; Xie XC (Xie X. C.) ; Buhmann H (Buhmann H.) ; Molenkamp LW (Molenkamp L. W.)
刊名	new journal of physics
	2010
期号	12 页码:art. no. 083058
关键词	SINGLE DIRAC CONE TOPOLOGICAL INSULATORS HALL SURFACE STATE PHASE
合作状况	国际
英文摘要	we demonstrate that a p-n junction created electrically in hgte quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. we find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. the opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the fermi energy and the strength of the rashba spin-orbit interaction (rsoi). the occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (q1d) p-n junction can be switched on and off by tuning the gate voltage. the spin orientation can be substantially rotated when the samples exhibit a moderately strong rsoi.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-20t08:22:14z no. of bitstreams: 1 quantum tunneling through planar p-n junctions in hgte quantum wells.pdf: 1037651 bytes, checksum: f930da254fdc7d89987277862b3ea397 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-20t08:28:24z (gmt) no. of bitstreams: 1 quantum tunneling through planar p-n junctions in hgte quantum wells.pdf: 1037651 bytes, checksum: f930da254fdc7d89987277862b3ea397 (md5); made available in dspace on 2010-09-20t08:28:25z (gmt). no. of bitstreams: 1 quantum tunneling through planar p-n junctions in hgte quantum wells.pdf: 1037651 bytes, checksum: f930da254fdc7d89987277862b3ea397 (md5) previous issue date: 2010; 国际
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-09-20 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13536]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhang LB ,Chang K ,Xie XC ,et al. Quantum tunneling through planar p-n junctions in HgTe quantum wells[J]. new journal of physics,2010(12):art. no. 083058.
APA	Zhang LB ,Chang K ,Xie XC ,Buhmann H ,&Molenkamp LW .(2010).Quantum tunneling through planar p-n junctions in HgTe quantum wells.new journal of physics(12),art. no. 083058.
MLA	Zhang LB ,et al."Quantum tunneling through planar p-n junctions in HgTe quantum wells".new journal of physics .12(2010):art. no. 083058.