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	ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE)
	Ma X. M. ; Yang X. T. ; Wang C. ; Yang J. ; Gao X. H. ; Liu J. E. ; Jing H. ; Du G. T. ; Liu B. Y. ; Ma K.
	2008
会议名称	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008
会议地点	Shanghai, China
关键词	ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1 2 3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50 indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.
页码	833-835
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33551]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Ma X. M.,Yang X. T.,Wang C.,et al. ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE)[C]. 见:2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008. Shanghai, China.

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