Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist

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	Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist
	Liu Y (Liu Yan) ; Xu XJ (Xu Xuejun) ; Xing B (Xing Bo) ; Yu YD (Yu Yude) ; Yu JZ (Yu Jinzhong)
刊名	ieee photonics technology letters
	2010
卷号	22 期号:7 页码:501-503
关键词	Silicon-on-insulator (SOI)
通讯作者	liu, y, chinese acad sci, inst semicond, state key lab optoelect, beijing 100083, peoples r china.e-mail address: liuyan@semi.ac.cn ; xjxu@semi.ac.cn ; xingbo@semi.ac.cn ; yudeyu@semi.ac.cn ; jzyu@semi.ac.cn
合作状况	其它
英文摘要	a silicon-on-insulator optical fiber-to-waveguide spot-size converter (ssc) using poly-methylmethacrylate (pmma) is presented for integrated optical circuits. unlike the conventional use of pmma as a positive resist, it has been successfully used as a negative resist with high-dose electron exposure for the fabrication of ultrafine silicon wire waveguides. additionally, this process is able to reduce the side-wall roughness, and substantially depresses the unwanted propagation loss. exploiting this technology, the authors demonstrated that the ssc can improve coupling efficiency by as much as over 2.5 db per coupling facet, compared with that of ssc fabricated with pmma as a positive resist with the same dimension.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t14:02:59z no. of bitstreams: 1 fabrication of a low-loss ssc using high-dose electron beam lithography exposure with negative pmma resist.pdf: 418945 bytes, checksum: 8a52cdc11e8b30bf9ce98206359a88af (md5); submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t14:02:59z no. of bitstreams: 1 fabrication of a low-loss ssc using high-dose electron beam lithography exposure with negative pmma resist.pdf: 418945 bytes, checksum: 8a52cdc11e8b30bf9ce98206359a88af (md5); national natural science foundation of china 60537010；national basic research program of china 2006cb302803；national high technology program of china 2007cb613405 2006aa03z424; 其它
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60537010；national basic research program of china 2006cb302803；national high technology program of china 2007cb613405 2006aa03z424
语种	英语
公开日期	2010-04-22 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11190]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Liu Y ,Xu XJ ,Xing B ,et al. Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist[J]. ieee photonics technology letters,2010,22(7):501-503.
APA	Liu Y ,Xu XJ ,Xing B ,Yu YD ,&Yu JZ .(2010).Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist.ieee photonics technology letters,22(7),501-503.
MLA	Liu Y ,et al."Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist".ieee photonics technology letters 22.7(2010):501-503.