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	Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE)
	Zhang Y. J. ; Xu C. S. ; Liu Y. C. ; Liu Y. X. ; Wang G. R. ; Fan X. W.
	2006
关键词	We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
页码	242-247
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33174]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Zhang Y. J.,Xu C. S.,Liu Y. C.,et al. Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE)[C]. 见:.

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