| A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact | |
| Jiang MX(蒋梦轩); Shen Z(沈征); Wang J(王俊); Yin X(尹新); Shuai ZK(帅智康); Lu J(陆江) | |
| 刊名 | Journal of Semiconductors
 |
| 2016 | |
| 卷号 | Vol.37 No.2页码:024011(1-5) |
| 关键词 | breakdown voltage conductivity modulation current density latch up IGBT |
| ISSN号 | 1674-4926 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6071646 |
| 专题 | 湖南大学 |
| 推荐引用方式 GB/T 7714 | Jiang MX,Shen Z,Wang J,et al. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. Journal of Semiconductors,2016,Vol.37 No.2:024011(1-5). |
| APA | Jiang MX,Shen Z,Wang J,Yin X,Shuai ZK,&Lu J.(2016).A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact.Journal of Semiconductors,Vol.37 No.2,024011(1-5). |
| MLA | Jiang MX,et al."A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact".Journal of Semiconductors Vol.37 No.2(2016):024011(1-5). |
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